First-principle electronic properties of dilute-P AlNP deep ultraviolet semiconductor
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چکیده
منابع مشابه
First-Principle Electronic Properties of Dilute-P GaN1−xPx Alloy for Visible Light Emitters
A study on the electronic properties of the dilute-P GaN(1-x)P(x)alloy using First-Principle Density Functional Theory (DFT) calculations is presented. Our results indicate a band gap energy coverage from 3.645 eV to 2.697 eV, with P-content varying from 0% to 12.5% respectively. In addition, through line fitting of calculated and experimental data, a bowing parameter of 9.5 ± 0.5 eV was obtain...
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2018
ISSN: 2158-3226
DOI: 10.1063/1.5036978